情報化社会で一般化するIoTで必須となる5Gや低炭素社会に不可欠なマテリアルイノベーションとして、 青色発光ダイオードで脚光を浴びた窒化ガリウムGaN結晶の高品質結晶化技術の創出があります。 当研究室では「Naフラックス法」や「OVPE法」という全く新しいGaN結晶の育成方法を発見・開発し、 世界で最も高品質なGaN結晶育成に成功しています。このような新しい結晶育成技術の実用化を目指し、 環境省の省エネプロジェクト、文部科学省のGaN拠点プログラムをはじめ他大学や10社を越える様々な 企業との共同研究によって推進しています。

One of the essential material innovations for low-carbon society and 5G, which is crucial for the IoT generalized in the information society, is the creation of high-quality crystallization technology for gallium nitride GaN crystals, which has been highlighted as an application for blue light emitting diodes. In our laboratory, we have discovered and developed completely new GaN crystal growth methods such as "Na-flux method" and "OVPE method", and succeeded in growing the highest quality GaN crystal in the world. Aiming to put these new crystal growth technologies into practical use, we are promoting them through collaborative research with other universities and more than 10 companies, including the Ministry of the Environment's energy conservation projects and the Ministry of Education, Culture, Sports, Science and Technology's GaN base program.